General Description
   This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics.

FEATUREs
◾ High ruggedness
◾ RDS(ON) (Max 0.023 Ω)@VGS=10V
◾ Gate Charge (Typ 100nC)
◾ Improved dv/dt Capability
◾ 100% Avalanche Tested