GENERAL DESCRIPTION
   SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
   These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.

FEATURES
✦ 7A, 650V, RDS(on)(typ.)=1.2@VGS=10V
✦ Low gate charge
✦ Low Crss
✦ Fast switching
✦ Improved dv/dt capability