STW30NM60D データシート - STMicroelectronics
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STMicroelectronics
DESCRIPTION
The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
General Features
■ TYPICAL RDS(on) = 0.125 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE RATED
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ LOW GATE INPUT RESISTANCE
■ FAST INTERNAL RECOVERY DIODE
APPLICATIONS
■ ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
N-CHANNEL 600V - 0.125Ω - 30A TO-247 MDmesh™ MOSFET
STMicroelectronics
N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT
STMicroelectronics
N-CHANNEL 30A - 600V TO-247 PowerMESH™ IGBT
STMicroelectronics
N-CHANNEL 30A - 600V TO-247 PowerMESH™ IGBT
STMicroelectronics
N-CHANNEL 500V - 0.10Ω - 30A TO-247 MDmesh™ MOSFET ( Rev : 2005 )
STMicroelectronics
N-channel 1200V - 30A - TO-247 very fast PowerMESH™ IGBT
STMicroelectronics
N - CHANNEL 600V - 0.69Ω - 10A - TO-247 PowerMESH™ MOSFET
STMicroelectronics
N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh™ MOSFET
STMicroelectronics
N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH™ IGBT
STMicroelectronics
N-CHANNEL 600V - 0.48Ω - 12A TO-247 PowerMesh II MOSFET
STMicroelectronics