STW26NM60 データシート - STMicroelectronics
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STMicroelectronics
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
■ TYPICAL RDS(on) = 0.125Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ IMPROVED ESD CAPABILITY
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESISTANCE
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
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N-CHANNEL 600V - 0.27Ω - 16A TO-247 Zener-Protected SuperMESH™ MOSFET
STMicroelectronics
N-CHANNEL 600V - 0.38Ω - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH™ MOSFET ( Rev : 2004 )
STMicroelectronics
N-CHANNEL 600V-0.48Ω-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™ Power MOSFET
STMicroelectronics
N-CHANNEL 600V-0.48Ω-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET
STMicroelectronics
N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESH™ Power MOSFET
STMicroelectronics
N-channel 800V - 0.53Ω - 12A - TO-247 Zener-protected SuperMESH™ Power MOSFET
STMicroelectronics
N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247
Zener-protected SuperMESH™ Power MOSFET
STMicroelectronics
N-CHANNEL 800V - 0.65Ω - 10.5A TO-247 Zener-Protected SuperMESH™ Power MOSFET ( Rev : 2002 )
STMicroelectronics
N-CHANNEL 800V - 0.53Ω - 12A TO-247 Zener-Protected SuperMESH™ Power MOSFET ( Rev : 2003 )
STMicroelectronics
N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH™ Power MOSFET
STMicroelectronics