部品番号
STU36L01A
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4 Pages
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915.5 kB
メーカー
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
STU36L01A データシート - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Description：
This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features：
1) VDS=100V,ID=40A,RDS(ON)<20mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
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