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STP9NC60 データシート - STMicroelectronics

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STP9NC60

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ST-Microelectronics
STMicroelectronics 

The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re
finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

 

■ TYPICAL RDS(on) = 0.6Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED

 

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N-CHANNEL 600V - 7Ω - 1.9A - TO-220/TO-220FP PowerMesh™II MOSFET
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N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET
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N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET
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N - CHANNEL 600V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH MOSFET
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