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STP5NA80 データシート - New Jersey Semiconductor

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部品番号
STP5NA80

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3 Pages

File Size
1,010.3 kB

メーカー
NJSEMI
New Jersey Semiconductor 

DESCRIPTION
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low Ros(on) and gate charge, unequalled ruggedness and superior switching performance.

■ TYPICAL Ros(on) = 1.8H
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD


APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

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部品番号
コンポーネント説明
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メーカー
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF
STMicroelectronics
N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF
New Jersey Semiconductor
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF
STMicroelectronics

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