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STP40NS15 データシート - STMicroelectronics

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部品番号
STP40NS15

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6 Pages

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85.4 kB

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ST-Microelectronics
STMicroelectronics 

DESCRIPTION
This powermos MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.

■ TYPICAL RDS(on) = 0.042Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED


APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ PRIMARYSWITCH IN ISOLATED DC-DC CONVERTERS

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