STP40NS15 データシート - STMicroelectronics
メーカー

STMicroelectronics
DESCRIPTION
This powermos MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
■ TYPICAL RDS(on) = 0.042Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ PRIMARYSWITCH IN ISOLATED DC-DC CONVERTERS
N-CHANNEL 150V - 0.042Ω - 40A TO-247 MESH OVERLAY™ MOSFET
STMicroelectronics
N-CHANNEL 150V - 0.042Ω - 40A D2PAK MESH OVERLAY™ MOSFET ( Rev : 2001 )
STMicroelectronics
N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY™ Power MOSFET
STMicroelectronics
N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET
STMicroelectronics
N - CHANNEL 200V - 0.35Ω - 9A - TO-220/FP MESH OVERLAY MOSFET ( Rev : 1999 )
STMicroelectronics
N-CHANNEL 250V - 0.23Ω - 16A TO-220 / TO-220FP MESH OVERLAY™ MOSFET
STMicroelectronics
N-CHANNEL 250V - 0.9Ω - 6A TO-220 MESH OVERLAY™ MOSFET
STMicroelectronics
N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET
STMicroelectronics
N-CHANNEL 250V - 0.23Ω - 16A TO-220 / TO-220FP MESH OVERLAY™ MOSFET
Unspecified
N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET ( Rev : 2001 )
STMicroelectronics