N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.026 Ω
■ AVALANCHERUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ HIGH CURRENT CAPABILITY
■ 175oC OPERATING TEMPERATURE
■ HIGH dV/dt RUGGEDNESS
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ POWER MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCRONOUS RECTIFICATION