部品番号
STP18NM60N
コンポーネント説明
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21 Pages
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STMicroelectronics
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STP18NM60N(2012) データシート - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATIONs
■ Switching applications
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N-channel 600 V - 0.25 Ω typ., 13 A FDmesh™ II Power MOSFET
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