部品番号
STP12IE90F4
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STP12IE90F4 データシート - STMicroelectronics
STMicroelectronics
Description
The STP12IE90F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.
It is designed for use in Gate Driven based topologies.
General features
■ High voltage / high current Cascode configuration
■ Low equivalent on resistance
■ Very fast-switch up to 150 kHz
■ Squared RBSOA up to 900V
■ Very low Ciss driven by RG = 47Ω
■ Very low turn-off cross over time
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