部品番号
STP11NM50N
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STMicroelectronics
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STP11NM50N データシート - STMicroelectronics
STMicroelectronics
Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
Switching applications
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N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220 MDmesh™ II Power MOSFET
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N-channel 500 V, 0.2 Ω, 14 A MDmesh™ II Power MOSFET in TO-220FP, TO-220 and TO-247 ( Rev : 2010 )
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N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET
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N-channel 650 V, 390 mΩ typ., 8.5 A MDmesh M5 Power MOSFET in a TO-220FP and TO-220 packages ( Rev : 2022 )
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N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET
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N-channel 500 V, 0.2 Ω typ., 14 A MDmesh™ II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
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N-channel 650 V, 0.425 Ωtyp., 11 A MDmesh™II Power MOSFET in DPAK, TO-220FP, I²PAKFP and TO-220 packages
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N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK and TO-220 packages
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N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
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N-channel 650 V, 0.43 Ω, 9 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
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