DESCRIPTION
   The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .

FEATURE
● 20V/5.0A, RDS(ON) = 50mΩ
                           @VGS = 4.5V
● 20V/4.0A, RDS(ON) = 65mΩ
                           @VGS = 2.5V
● 20V/2.8A, RDS(ON) = 90mΩ
                           @VGS = 1.8V
● Super high density cell design for
   extremely low RDS(ON)
● Exceptional on-resistance and
   maximum DC current capability
● SOP-8 package design