STL12N65M5 データシート - STMicroelectronics
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STMicroelectronics
Description
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
FEATUREs
• Outstanding RDS(on)*area
• Extremely large avalanche performance
• Gate charge minimized
• Very low intrinsic capacitance
• 100% avalanche tested
APPLICATIONs
• Switching applications
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More Pages
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