Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

FEATUREs
■ Low on-voltage drop (VCE(sat))
■ Low Cres / Cies ratio (no cross conduction susceptibility)
■ Short circuit withstand time 10 µs
■ IGBT co-packaged with ultra fast free-wheeling diode

APPLICATIONs
■ High frequency inverters
■ Motor drivers