STD9NM50N データシート - STMicroelectronics
メーカー

STMicroelectronics
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATIONs
■ Switching application
N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET ( Rev : 2006 )
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N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET ( Rev : 2007 )
STMicroelectronics
N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh™ Power MOSFET ( Rev : 2008_02 )
STMicroelectronics
N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET ( Rev : 2008_01 )
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N-channel 600 V, 5 A, 0.84 Ω, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh™ Power MOSFET
STMicroelectronics
N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH™ Power MOSFET
STMicroelectronics
N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™ Power MOSFET
STMicroelectronics
N-channel 600 V - 0.37 Ω- 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh™ Power MOSFET ( Rev : 2008 )
STMicroelectronics
N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh™ Power MOSFET ( Rev : 2003 )
STMicroelectronics
N-CHANNEL 500V - 0.93Ω - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™ MOSFET
STMicroelectronics