部品番号
STD6N95K5
コンポーネント説明
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STMicroelectronics
STD6N95K5 データシート - STMicroelectronics
STMicroelectronics
Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
FEATUREs
• DPAK 950 V worldwide best RDS(on)
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
部品番号
コンポーネント説明
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N-channel 950 V, 2 Ω typ., 3.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
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N-channel 800 V, 2.8 Ω typ., 2.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
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N-channel 950 V, 0.275 Ω typ., 17.5 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247
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