STD5N20T4(2000) データシート - STMicroelectronics
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STMicroelectronics
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.
■ TYPICAL RDS(on) = 0.6 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ ADD SUFFIX “T4” FOR OREDERING IN TAPE &
REEL
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
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N-CHANNEL 200V - 0.35 OHM - 7A - DPAK MESH OVERLAY MOSFET
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N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET™ MOSFET
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N - CHANNEL 200V - 0.70Ω - 5A DPAK PowerMESH™ MOSFET
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N-CHANNEL 200V - 1.2Ω - 4A DPAK/IPAK MESH OVERLAY™ MOSFET
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N-CHANNEL 250V - 0.38Ω - 8A DPAK MESH OVERLAY™ MOSFET
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N - CHANNEL 200V - 0.35Ω - 9A - D2PAK MESH OVERLAY™ MOSFET
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N-CHANNEL 250V - 0.9Ω - 4A DPAK/IPAK MESH OVERLAY™ MOSFET
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N-CHANNEL 7A - 600V DPAK Power MESH™ IGBT
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N-CHANNEL 3A - 600V DPAK Power MESH™ IGBT ( Rev : 2000 )
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N-CHANNEL 3A - 600V DPAK Power MESH™ IGBT ( Rev : 1999 )
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