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STD3N30T4 データシート - STMicroelectronics

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STD3N30T4

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ST-Microelectronics
STMicroelectronics 

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 1.1 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)


APPLICATIONS
■ HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ INDUSTRIAL ACTUATORS
■ DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT
■ PARTICULARLY SUITABLE FOR ELECTRONIC FLUORESCENT LAMP BALLASTS

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N-Channel Enhancement Mode Power MOS Transistor
PDF
ARTSCHIP ELECTRONICS CO.,LMITED.
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF
Unspecified
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF
STMicroelectronics

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