部品番号
STD1HN60K3
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PDF
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19 Pages
File Size
1.4 MB
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STMicroelectronics
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STD1HN60K3 データシート - STMicroelectronics
STMicroelectronics
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
FEATUREs
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
• Improved diode reverse recovery
characteristics
• Zener-protected
APPLICATIONs
• Switching applications
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