DESCRIPTION
   This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.027 Ω @ 4.5 V
■ TYPICAL RDS(on) = 0.031 Ω @ 2.7 V
■ ULTRA LOW THRESHOLD GATE DRIVE (2.7 V)
■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY

APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
■ POWER MANAGEMENT IN PORTABLE/DESKTOP PCs