部品番号
STB60NE03L-10
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8 Pages
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STMicroelectronics
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STB60NE03L-10 データシート - STMicroelectronics
STMicroelectronics
DESCRIPTION
This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.
◾ TYPICAL RDS(on) = 0.007 Ω
◾ EXCEPTIONAL dv/dt CAPABILITY
◾ 100% AVALANCHE TESTED
◾ LOW GATE CHARGE 100 °C
◾ APPLICATION ORIENTED
CHARACTERIZATION
◾ FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
APPLICATIONS
◾ HIGH CURRENT, HIGH SPEED SWITCHING
◾ SOLENOID AND RELAY DRIVERS
◾ MOTOR CONTROL, AUDIO AMPLIFIERS
◾ DC-DC & DC-AC CONVERTERS
◾ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
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