Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
FEATUREs
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247
STMicroelectronics
N-channel 950 V, 2 Ω typ., 3.5 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
STMicroelectronics
N-channel 950 V, 0.41 Ω typ., 12 A SuperMESH™ 5 Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 800 V, 0.3 Ω typ., 14 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 950 V, 1 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220, IPAK and TO-247 packages
STMicroelectronics
N-channel 650 V, 70 mΩ typ., 33 A, MDmesh M5 Power MOSFETs in D²PAK, TO-220FP, I²PAK, TO-220 and TO-247 packages ( Rev : 2019 )
STMicroelectronics
N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 95 mΩ typ., 24 A MDmesh™ M5 Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics