部品番号
STB20N65M5
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21 Pages
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1.1 MB
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STMicroelectronics
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STB20N65M5 データシート - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
FEATUREs
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
APPLICATIONs
■ Switching applications
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