部品番号
STB18N60DM2
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STB18N60DM2(2016) データシート - STMicroelectronics
STMicroelectronics
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
• Fast-recovery body diode
• Extremely low gate charge and input
capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
APPLICATIONs
• Switching applications
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N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a D²PAK package
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Automotive-grade N-channel 600 V, 85 mΩ typ., 34 A MDmesh DM2 Power MOSFET in a D²PAK package
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Automotive-grade N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a D²PAK package ( Rev : 2015 )
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N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package ( Rev : 2016 )
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N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package
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N-channel 600 V, 0.95 Ω typ., 5 A MDmesh™ DM2 Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.065 Ω typ., 40 A MDmesh™ DM2 Power MOSFET in a TO-247 package
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N-channel 600 V, 0.370 Ω typ., 10 A MDmesh™ DM2 Power MOSFET in a TO-220FP package ( Rev : 2015 )
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