SSP1027 データシート - Secos Corporation.
メーカー

Secos Corporation.
DESCRIPTION
The SSP1027 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SSP1027 is universally used for all commercial-industrial applications.
FEATURES
• Low On-Resistance
• Low Gate Charge
-5.7 A, -20 V, RDS(ON) 42 mΩ P-Channel Enhancement Mode Mos.FET
Secos Corporation.
-4.0A, -30V, RDS(ON) 80mΩ P-Channel Enhancement Mode MOS.FET ( Rev : 2010 )
Secos Corporation.
-4.0A, -30V, RDS(ON) 80mΩ P-Channel Enhancement Mode Power Mos.FET ( Rev : 2002 )
Secos Corporation.
-3.7A, -30V,RDS(ON) 75mΩ P-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
-5A, -20V, RDS(ON) 65mΩ P-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
-2.3A, -30V, RDS(ON) 135mΩ P-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
-20 A, -20 V, RDS(ON) 8.4 mΩ P-Channel Enhancement MOSFET ( Rev : 2010 )
Secos Corporation.
2.2 A, 100 V, RDS(ON) 280 mΩ N-Channel Enhancement Mode Mos.FET
Secos Corporation.
6.3 A, 30 V, RDS(ON) 27 mΩ N-Channel Enhancement Mode Mos.FET
Secos Corporation.
N-Channel Enhancement Mode Mos.FET 1.2 A, 150 V, RDS(ON) 700 mΩ
Secos Corporation.