SSM6N55NU データシート - Toshiba
メーカー

Toshiba
Features
(1) 4.5V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 46 mΩ (max) (@VGS = 10 V)
RDS(ON) = 64 mΩ (max) (@VGS = 4.5 V)
APPLICATIONs
• Power Management Switches
• DC-DC Converters
MOSFETs Silicon N-Channel MOS ( Rev : 2017 )
Toshiba
MOSFETs Silicon N-Channel MOS ( Rev : 2014 )
Toshiba
MOSFETs Silicon N-Channel MOS ( Rev : 2018 )
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS ( Rev : 2014 )
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba