SSM6K30FE データシート - Toshiba
メーカー

Toshiba
○ High-speed switching
○ DC-DC Converter
• Small package
• Low RDS (ON): RDS(ON) = 210 mΩ (max) (@VGS = 10 V)
: R DS(ON) = 420 mΩ (max) (@VGS = 4 V)
• High-speed switching: ton = 19 ns (typ.)
: toff = 10 ns (typ.)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) ( Rev : 2011 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) ( Rev : 2013 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) ( Rev : 2013 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII)
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS VII-H)
Toshiba