SSM3J334R(2014) データシート - Toshiba
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Toshiba
○ Power Management Switch Applications
• Low ON-resistance: RDS(ON) = 71 mΩ (max) (@VGS = -10 V)
RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V)
RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (π−MOSVI/U−MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (p -MOSVI) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
Toshiba
