SSF2610E データシート - Silikron Semiconductor Co.,LTD.
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Silikron Semiconductor Co.,LTD.
DESCRIPTION
The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
GENERAL FEATURES
● VDS = 20V,ID = 8A
RDS(ON) < 23mΩ @ VGS=1.8V
RDS(ON) < 18mΩ @ VGS=2.5V
RDS(ON) < 14mΩ @ VGS=4.5V
ESD Rating: 2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
APPLICATION
● Battery protection
● Load switch
● Power management
High power and current handing capability
Unspecified
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.
High Power and current handing capability
Silikron Semiconductor Co.,LTD.