DESCRIPTION
   The SSE08N60SL is an N-channel enhancement mode power MOS field effect transistor which is produced. The improved planar strip cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
   These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

FEATURES
• 8A, 600V, RDS(ON)(TYP.)=0.96Ω@VGS=10V
• Low Gate Charge
• Low Crss
• Fast Switching
• Improved dv/dt Capability