DESCRIPTION
   The SPP3407 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
   This high density process is especially tailored to minimize on-state resistance.
   These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

FEATURES
✦ -30V/-4.0A,RDS(ON)= 60mΩ@VGS=- 10V
✦ -30V/-3.2A,RDS(ON)= 80mΩ@VGS=-4.5V
✦ Super high density cell design for extremely low
   RDS (ON)
✦ Exceptional on-resistance and maximum DC
   current capability
✦ SOT-23-3L package design

APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter