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SPA11N60C3E8185 データシート - Infineon Technologies

SPP11N60C3_18 image

部品番号
SPA11N60C3E8185

コンポーネント説明

Other PDF
  2009  

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page
15 Pages

File Size
672.2 kB

メーカー
Infineon
Infineon Technologies 

Cool MOS™ Power Transistor


FEATURE
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC0) for target applications


部品番号
コンポーネント説明
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