SMBT3906U データシート - Infineon Technologies
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Infineon Technologies
PNP Silicon Switching Transistors
• High DC current gain: 0.1 mA to 100 mA
• Low collector-emitter saturation voltage
• For SMBT3906S and SMBT3906U:
Two (galvanic) internal isolated transistor
with good matching in one package
• Complementary types:
SMBT3904...MMBT3904 (NPN)
• SMBT3904S / U: for orientation in reel
see package information below
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
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