The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 mm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, making it ideal for compact optical control equipment.

FEATUREs
1) Compact (φ3.1 mm).
2) High efficiency, high output PO = 8.4 mW (IF = 50 mA).
3) Wide radiation angie θ1 / 2 = ±16deg.
4) Peak wavelength well suited to silicon detectors (λP = 940 nm).
5) Good current-optical output linearity.
6) Long life, high reliability.
7) Low cost, clear epoxy resin package.

APPLICATIONs
    Optical control equipment
    Light source for remote control devices