General Description
This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

FEATUREs
• Q1: N-Channel
   6 A, 30 V RDS(on) = 28 mΩ @ VGS = 10V  RDS(on) = 35 mΩ @ VGS = 4.5V
• Q2: P-Channel
   –6 A, –30 V RDS(on) = 32 mΩ @ VGS = –10V  RDS(on) = 45 mΩ @ VGS = –4.5V

APPLICATIONs
• DC/DC converter
• Power management