General Description
   This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.

FEATUREs
• –3.5 A, –20 V. RDS(ON) = 80 mΩ @ VGS = –4.5 V
                          RDS(ON) = 110 mΩ @ VGS = –2.5 V
• Low gate charge
• High performance trench technology for extremely
   low RDS(ON)

APPLICATIONs
• Battery management
• Load switch
• Battery protection