General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching
performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for induction heating applications.

FEATUREs
• High speed switching
• Low saturation voltage : VCE(sat)= 2.0 V @ IC = 60A
• High input impedance
• Built-in fast recovery diode

APPLICATIONs
Home appliances, induction heaters, induction heating JARs, and microwave ovens.