General Description
   This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for AC-DC switching power supplies, DC-DC power converters, high voltage H-bridge motor drive PMW

FEATUREs
■ 12A,650V,RDS(on)(Max0.78Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 30nC)
■ Fast Switching Capability
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range(150℃)