DESCRIPTION
The SD56120M is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120M is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity.

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION, PUSHPULL
• POUT = 120 W WITH 13 dB gain @ 860 MHz /32V
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING