Distinctive Characteristics
◾ Single 1.8V read, program and erase (1.70V to 1.95V)
◾ VersatileIO™ Feature
   – Device generates data output voltages and tolerates data input
      voltages as determined by the voltage on the VCCQ pin
   – 1.8V compatible I/O signals
◾ Multiplexed Data and Address for reduced I/O count
   – A15–A0 multiplexed as DQ15–DQ0
   – Addresses are latched by AVD# control input when CE# low
◾ Simultaneous Read/Write operation
   – Data can be continuously read from one bank while executing
      erase/program functions in other bank
   – Zero latency between read and write operations
◾ Read access times at 66 MHz
   – Burst access times of 9/11 ns at industrial temperature range
   – Asynchronous random access times of 80 ns
   – Synchronous random access times of 80 ns
◾ Burst length
   – Continuous linear burst
   – 8/16/32 word linear burst with wrap around
   – 8/16/32 word linear burst without wrap around
◾ Secured Silicon Sector region
   – 256 words accessible through a command sequence
   – 128 words for the Factory Secured Silicon Sector
   – 128 words for the Customer Secured Silicon Sector
◾ Power dissipation (typical values: 8 bits switching,
   CL = 30 pF) @ 66 MHz
   – Continuous Burst Mode Read: 28 mA
   – Simultaneous Operation: 50 mA
   – Program/Erase: 19 mA
   – Standby mode: 20 µA
◾ Sector Architecture
   – Four 16 K word sectors (S29NS256N and S29NS128N) and four 8K
      word sectors (S29NS064N) in upper-most address range
   – Two-hundred-fifty-five 64-Kword sectors (S29NS256N), 
      one-hundred-twenty-seven 64-Kword sectors (S29NS128N) and one
      hundred twenty-seven 32Kword sectors (S29NS064N)
   – Sixteen banks (S29NS128N and S29NS256N) and eight banks
      (S29NS064N)
◾ High Performance
   – Typical word programming time of 40 µs
   – Typical effective word programming time of 9.4 µs utilizing a
      32-Word Write Buffer at VCC Level
   – Typical effective word programming time of 6 µs utilizing a 32-Word
      Write Buffer at ACC Level
   – Typical sector erase time of 150 ms for 16 Kword sectors and
      800 ms sector erase time for 64 Kword sectors