General Description
 The S29CD016G is a 16 Megabit, 2.5 Volt-only single power supply burst mode  flash memory device. The device can be configured for 524,288 double words.  The device can also be programmed in standard EPROM programmers.

Distinctive Characteristics
Architecture Advantages
■ Simultaneous Read/Write operations
   — Two bank architecture: large bank/ small bank
   — Data can be read from bank while executing erase/
      program functions in other bank
   — Zero latency between read and write operations
■ User-Defined x32 Data Bus
■ Dual Boot Block
   — Top and bottom boot sectors in the same device
■ Flexible sector architecture
   — Eight 8 Kbytes, thirty 64 Kbytes, and eight 8 Kbytes
      sectors
■ Manufactured on 170 nm process technology
■ SecSi (Secured Silicon) Sector (256 Bytes)
   — Factory locked and identifiable: 16 bytes for secure,
      random factory Electronic Serial Number; remainder
      may be customer data programmed by Spansion™
   — Customer lockable: Can be read, programmed, or
      erased just like other sectors. Once locked, data
      cannot be changed
■ Programmable Burst interface
   — Interface to any high performance processor
   — Modes of Burst Read Operation:
   — Linear Burst: 4 double words and 8 double words
      with wrap around
■ Program Operation
   — Ability to perform synchronous and asynchronous
      write operations of burst configuration register
      settings independently
■ Single power supply operation
   — Optimized for 2.5 to 2.75 volt read, erase, and
      program operations
■ Compatibility with JEDEC standards (JC42.4)
   — Software compatible with single-power supply Flash
   — Backward-compatible with AMD Am29LV and Am29F
      and Fujitsu MBM29LV and MBM29F flash memories

Performance Characteristics
■ High performance read access
   — Initial/random access times as fast as 54 ns
   — Burst access time as fast as 9 ns for ball grid array
      package
■ Ultra low power consumption
   — Burst Mode Read: 90 mA @ 66 MHz max,
   — Program/Erase: 50 mA max
   — Standby mode: CMOS: 60 µA max
■ 1 million write cycles per sector typical
■ 20 year data retention typical
■ VersatileI/O™ control
   — Device generates data output voltages and tolerates
      data input voltages as determined by the voltage on
      the VIO pin
   — 1.65 V to 2.75 V compatible I/O signals
   — 3.6 V tolerant I/O signals

Software Features
■ Persistent Sector Protection
   — A command sector protection method to lock
      combinations of individual sectors and sector groups
      to prevent program or erase operations within that
      sector (requires only VCC levels)
■ Password Sector Protection
   — A sophisticated sector protection method to lock
      combinations of individual sectors and sector groups
      to prevent program or erase operations within that
      sector using a user-definable 64-bit password
■ Supports Common Flash Interface (CFI)
■ Unlock Bypass Program Command
   — Reduces overall programming time when issuing
      multiple program command sequences
■ Data# Polling and toggle bits
   — Provides a software method of detecting program or
      erase operation completion

Hardware Features
■ Program Suspend/Resume & Erase Suspend/
   Resume
   — Suspends program or erase operations to allow
      reading, programming, or erasing in same bank
■ Hardware Reset (RESET#), Ready/Busy# (RY/
   BY#), and Write Protect (WP#) inputs
■ ACC input
   — Accelerates programming time for higher throughput
      during system production
■ Package options
   — 80-pin PQFP
   — 80-ball Fortified BGA