RJS6004TDPEJ データシート - Renesas Electronics
メーカー

Renesas Electronics
Features
• New semiconductor material: Silicon Carbide Diode
• No reverse recovery / No forward recovery
600V - 10A - Diode SiC Schottky Barrier Diode
Renesas Electronics
10A SiC Schottky Diode
Chip Integration Technology Corporation
600V - 15A - Diode SiC Schottky Barrier Diode
Renesas Electronics
10A SiC Schottky Diode
Chip Integration Technology Corporation
600V - 20A - Diode SiC Schottky Barrier Diode
Renesas Electronics
600V - 30A - Diode SiC Schottky Barrier Diode
Renesas Electronics
10A - 650V SiC Schottky Diode
UnitedSiC.
10A -1200V SiC Schottky Diode
UnitedSiC.
10A -1200V SiC Schottky Diode
UnitedSiC.
10A -1200V SiC Schottky Diode
UnitedSiC.