RJK60S3DPD データシート - Renesas Electronics
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Renesas Electronics
Features
• Superjunction MOSFET
• Low on-resistance
RDS(on) = 0.35 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C)
• High speed switching
tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50, Rg = 10, Ta = 25°C)
Page Link's:
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