RJK6026DPP-E0-T2 データシート - Renesas Electronics
メーカー
Renesas Electronics
Features
Low on-resistance
RDS(on)= 2.0Ω typ. (at ID= 2.5 A, VGS= 10 V, Ta = 25°C)
Low leakage current
High speed switching
Page Link's:
1
2
3
4
5
6
7
600V - 5A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 1A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 2A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 2A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 2A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 0.4A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 11A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 11A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 0.8A - MOS FET High Speed Power Switching
Renesas Electronics
600V - 21A - MOS FET High Speed Power Switching
Renesas Electronics
