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RJH60D1DPE-00-J3
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RJH60D1DPE-00-J3(2010) データシート - Renesas Electronics
Renesas Electronics
Features
• Short circuit withstand time (5 μs typ.)
• Low collector to emitter saturation voltage
VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)
• Built in fast recovery diode (100 ns typ.) in one package
• Trench gate and thin wafer technology
• High speed switching
tf = 90 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 Ω, , inductive load)
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Silicon N Channel IGBT Application: Inverter ( Rev : 2010 )
Renesas Electronics
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