P-ChannelEnhancement-Mode Power Field-Effect Transistors

   The RFMSP12andRFM5P15 andtheRFP5P12andRFP5P15 • are P-Channel enhancement-mode silicon gate power field-effect transistors designed forhlgh-speed applications such as switching ragulators, switching converters, relay drivers, and drivers for high-power bipolar switching transistors.

FEATUREr
◾ SOA Is power-dissipation limited
◾ Nanosecond switching speeds
◾ Linear transfer characteristics
◾ High Input Impedance
◾ Majority carrier device