Product Description
The RF2115L is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 915MHz. The device is packaged in a 16-lead ceramic quad leadless chip carrier with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line. A two-bit digital control provides 4 levels of power control, in 10dB steps.

FEATUREs
• Single 5V to 6.5V Supply
• Up to 1.0W CW Output Power
• 33dB Small Signal Gain
• 48% Efficiency
• Digitally Controlled Output Power
• Small Package Outline (0.25" x 0.25")

Typical Applications
• Analog Communication Systems
• Analog Cellular Systems (AMPS & TACS)
• 900MHz Spread-Spectrum Systems
• 400MHz Industrial Radios
• Driver Stage for Higher Power Applications
• Portable Battery-Powered Equipment