datasheetbank_Logo
データシート検索エンジンとフリーデータシート
HOME  >>>  Qorvo, Inc  >>> QPD1016 PDF

QPD1016 データシート - Qorvo, Inc

QPD1016 image

部品番号
QPD1016

Other PDF
  no available.

PDF
DOWNLOAD     

page
24 Pages

File Size
1.6 MB

メーカー
QORVO
Qorvo, Inc 

Product Overview
The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support pulsed and linear operations.
ROHS compliant.
Evaluation boards are available upon request.


KEY FEATUREs
• Frequency: DC to 1.7 GHz
• Output Power (P3dB)1: 680 W
• Linear Gain1: 23.9 dB
• Typical PAE3dB1: 77.4%
• Operating Voltage: 50 V
• CW and Pulse capable
   Note 1: @ 1.3 GHz Load Pull


APPLICATIONs
• IFF
• Avionics
• Military and civilian radar
• Test instrumentation


部品番号
コンポーネント説明
ビュー
メーカー
DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor
PDF
Qorvo, Inc
DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor
PDF
TriQuint Semiconductor
DC – 3.5 GHz, 50 V, 2 x 200 W GaN RF Transistor
PDF
Qorvo, Inc
DC – 25 GHz, 28 V, 14 W GaN RF Transistor
PDF
Qorvo, Inc
DC – 25 GHz, 28 V, 7 W GaN RF Transistor
PDF
Qorvo, Inc
DC – 12 GHz, 32 V, 5 W GaN RF Transistor
PDF
Qorvo, Inc
400 W, 50 V, 2.7 – 2.9 GHz, GaN RF Power Transistor
PDF
Qorvo, Inc
20 W, 32 V, DC to 12 GHz, GaN RF Transistor
PDF
Qorvo, Inc
35 W, 48 V, DC – 6 GHz, GaN RF Power Transistor
PDF
Qorvo, Inc
2.7 – 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor
PDF
Qorvo, Inc

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]