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Q67060-S7006-A2 データシート - Infineon Technologies

BTS725L1 image

部品番号
Q67060-S7006-A2

コンポーネント説明

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page
14 Pages

File Size
267.9 kB

メーカー
Infineon
Infineon Technologies 

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions.


FEATUREs
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
   (including load dump)
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
   with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection


APPLICATION
• µC compatible power switch with diagnostic feedback
   for 12 V DC grounded loads
• Most suitable for resistive and lamp loads
• Replaces electromechanical relays and discrete circuits

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部品番号
コンポーネント説明
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メーカー
Smart Two Channel Highside Power Switch
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Siemens AG
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Siemens AG
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Infineon Technologies
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PDF
Infineon Technologies
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PDF
Infineon Technologies
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PDF
Infineon Technologies
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Siemens AG

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